Annealing of Proton and Alpha Particle Damage in Au-W/beta-Ga2O3 Rectifiers
DC Field | Value | Language |
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dc.contributor.author | Xian, Minghan | - |
dc.contributor.author | Fares, Chaker | - |
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-08-31T20:24:39Z | - |
dc.date.available | 2021-08-31T20:24:39Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-12-13 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/60925 | - |
dc.description.abstract | Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 x 10(13) cm(-2) or 10 MeV protons to fluences of 1-3 x 10(14) cm(-2) and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were similar to 900 cm(-1) for the a-particles and similar to 200 for the protons. Annealing at 500 degrees C was found to restore the carrier concentration in the alpha-particle irradiated devices, while 450 degrees C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation. (c) 2019 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | SOLAR-BLIND PHOTODETECTORS | - |
dc.subject | IRRADIATION | - |
dc.title | Annealing of Proton and Alpha Particle Damage in Au-W/beta-Ga2O3 Rectifiers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2.0231912jss | - |
dc.identifier.scopusid | 2-s2.0-85077499140 | - |
dc.identifier.wosid | 000502954700001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.8, no.12, pp.P799 - P804 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | P799 | - |
dc.citation.endPage | P804 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SOLAR-BLIND PHOTODETECTORS | - |
dc.subject.keywordPlus | IRRADIATION | - |
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