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Improving Open-circuit Voltage in PbS-based QDPVs Using Different Pb Precursors

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dc.contributor.authorWe, Sangu-
dc.contributor.authorJin, Junyoung-
dc.contributor.authorLee, Kyung-Seok-
dc.contributor.authorHwang, Gyu Weon-
dc.contributor.authorHwang, Do-Kyung-
dc.contributor.authorLee, Jung-Hyun-
dc.date.accessioned2021-08-31T22:49:34Z-
dc.date.available2021-08-31T22:49:34Z-
dc.date.created2021-06-18-
dc.date.issued2019-12-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/61442-
dc.description.abstractyy Lead sulfide (PbS) quantum dots (QDs) have been researched for photovoltaic (PV) applications for decades. A large open-circuit voltage (V-OC) deficit to bandgap is one of the drawbacks to overcome in PbS QD-based photovoltaics (QDPVs) compared to other photovoltaic systems. Here, we report the V-OC improvement using a different Pb-precursor, PbCl2, which is known to have an better native ligand for chemical stability and photoluminescence quantum yield. We synthesized appropriate size of PbS QDs for PV applications by the Cademartiri method with modification. The PbCl2 precursors used in the Cademartiri method supply chloride ions (Cl-) for the atomic passivation. The Cl- as a native atomic ligand is substituted to iodide ions (I-) through post-synthesis ligand exchange process, and the remaining Cl- as a PbClx shell layer still exists after ligand exchange and passivates the QD surface. The V-OC using PbS QDs from the Cademartiri synthesis is 20 % larger than that from the Hines synthesis.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectSUB-BANDGAP STATES-
dc.subjectQUANTUM DOTS-
dc.subjectNANOCRYSTALS-
dc.subjectMONODISPERSE-
dc.subjectPERFORMANCE-
dc.subjectDIFFUSION-
dc.subjectROUTE-
dc.titleImproving Open-circuit Voltage in PbS-based QDPVs Using Different Pb Precursors-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Jung-Hyun-
dc.identifier.doi10.3938/jkps.75.985-
dc.identifier.scopusid2-s2.0-85077055596-
dc.identifier.wosid000508392300009-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.75, no.12, pp.985 - 989-
dc.relation.isPartOfJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume75-
dc.citation.number12-
dc.citation.startPage985-
dc.citation.endPage989-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART002539312-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusSUB-BANDGAP STATES-
dc.subject.keywordPlusQUANTUM DOTS-
dc.subject.keywordPlusNANOCRYSTALS-
dc.subject.keywordPlusMONODISPERSE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusDIFFUSION-
dc.subject.keywordPlusROUTE-
dc.subject.keywordAuthorQuantum dots-
dc.subject.keywordAuthorPhotovoltaics-
dc.subject.keywordAuthorOpen-circuit voltage-
dc.subject.keywordAuthorLead sulfide-
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