Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator
- Authors
- Wang, Yi; Zhu, Dapeng; Yang, Yumeng; Lee, Kyusup; Mishra, Rahul; Go, Gyungchoon; Oh, Se-Hyeok; Kim, Dong-Hyun; Cai, Kaiming; Liu, Enlong; Pollard, Shawn D.; Shi, Shuyuan; Lee, Jongmin; Teo, Kie Leong; Wu, Yihong; Lee, Kyung-Jin; Yang, Hyunsoo
- Issue Date
- 29-11월-2019
- Publisher
- AMER ASSOC ADVANCEMENT SCIENCE
- Citation
- SCIENCE, v.366, no.6469, pp.1125 - +
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENCE
- Volume
- 366
- Number
- 6469
- Start Page
- 1125
- End Page
- +
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/61529
- DOI
- 10.1126/science.aav8076
- ISSN
- 0036-8075
- Abstract
- Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque-induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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