Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature
DC Field | Value | Language |
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dc.contributor.author | Oh, Changyong | - |
dc.contributor.author | Jang, Hyunjae | - |
dc.contributor.author | Kim, Hyeong Wook | - |
dc.contributor.author | Jung, Hyunjae | - |
dc.contributor.author | Park, Hyungryul | - |
dc.contributor.author | Cho, Johann | - |
dc.contributor.author | Kim, Bo Sung | - |
dc.date.accessioned | 2021-09-01T02:46:20Z | - |
dc.date.available | 2021-09-01T02:46:20Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-10-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62515 | - |
dc.description.abstract | We examined the electrical properties of low-temperature-processed top-gate In-Sn-Ga-O (ITGO) thin-film transistors (TFTs) by rf/dc-sputtering with different oxygen partial pressures (PO2). As PO2 changed from 0 to 50.0%, the ITGO TFT showed various electrical characteristics such as from conductor-like behavior to transfer curves with positive-shifted threshold voltages (Vth). The TFT at PO2 of 25.0% afforded the best performance, exhibiting field-effect mobility of 14.8 cm(2)V(-1)s(-1), Vth of 0.56 V, and subthreshold slope of 0.16 Vdec(-1) with reasonable electrical stability for gate bias stress. From various analysis techniques, we found that the TFT characteristics and the electrical stability strongly depended on the metal-oxygen surface states of the ITGO films influenced by PO2 during the sputtering process. (C) 2019 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTOR | - |
dc.subject | CARRIER TRANSPORT | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.title | Influence of oxygen partial pressure in In-Sn-Ga-O thin-film transistors at a low temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Bo Sung | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.07.091 | - |
dc.identifier.scopusid | 2-s2.0-85068773763 | - |
dc.identifier.wosid | 000482184100025 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.805, pp.211 - 217 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 805 | - |
dc.citation.startPage | 211 | - |
dc.citation.endPage | 217 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordAuthor | In-Sn-Ga-O (ITGO) | - |
dc.subject.keywordAuthor | Thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | Oxygen partial pressure | - |
dc.subject.keywordAuthor | Low temperature | - |
dc.subject.keywordAuthor | Sputtering | - |
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