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Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

Authors
Kang, DaesungOh, Jeong-TakSong, June-OSeong, Tae-YeonKneissl, MichaelAmano, Hiroshi
Issue Date
1-10월-2019
Publisher
IOP PUBLISHING LTD
Citation
APPLIED PHYSICS EXPRESS, v.12, no.10
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS EXPRESS
Volume
12
Number
10
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/62581
DOI
10.7567/1882-0786/ab45d1
ISSN
1882-0778
Abstract
The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing the indium content. To identify the distribution of holes in the QWs, the electroluminescence of the LEDs was characterized by varying the positions of the QWs with the wider bandgap consecutively from n-cladding to p-cladding sides. For the LEDs without V pits, holes were injected through the top QWs (p-cladding side), while for the LEDs with V pits, holes were injected mainly through the bottom QWs (n-cladding side). (C) 2019 The Japan Society of Applied Physics
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SEONG, TAE YEON
공과대학 (신소재공학부)
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