Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jun Hyeok | - |
dc.contributor.author | Park, Chan Ho | - |
dc.contributor.author | Kim, Sung Moo | - |
dc.contributor.author | Yang, Ji-Woon | - |
dc.date.accessioned | 2021-09-01T04:49:58Z | - |
dc.date.available | 2021-09-01T04:49:58Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62606 | - |
dc.description.abstract | A physical capacitance model is presented for the drift region in a laterally diffused metal-oxide semiconductor (LDMOS). It is derived as a surface-potential-based model of nodal charge for the drift region. The model is combined with BSIM4, which is for the intrinsicMOSFET region of LDMOS, and it is validated with TCAD and measurement data. The model accurately predicts the capacitance of each node for the entire bias region. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | COMPACT MODEL | - |
dc.subject | HV | - |
dc.title | Physics-Based Capacitance Model of Drift Region in Laterally Diffused Metal-Oxide Semiconductor and Its Implementation with BSIM4 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yang, Ji-Woon | - |
dc.identifier.doi | 10.1166/jnn.2019.17113 | - |
dc.identifier.wosid | 000466046800001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6732 - 6735 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 19 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 6732 | - |
dc.citation.endPage | 6735 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | COMPACT MODEL | - |
dc.subject.keywordPlus | HV | - |
dc.subject.keywordAuthor | LDMOS | - |
dc.subject.keywordAuthor | Capacitance | - |
dc.subject.keywordAuthor | Compact Model | - |
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