Programmable Multilevel Memtransistors Based on van der Waals Heterostructures
DC Field | Value | Language |
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dc.contributor.author | Park, Hyunik | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-01T04:57:47Z | - |
dc.date.available | 2021-09-01T04:57:47Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62661 | - |
dc.description.abstract | Neuromorphic computing that mimics the energy-efficient cortical neural network in the human brain is attractive because of its possibility to process complex and massive data sets and achieve fast computing capability. Herein, a heterosynaptic and programmable memtransistor architecture with high computing functionality is reported by monolithically integrating a hexagonal boron nitride (h-BN) memristor with a molybdenum disulfide (MoS2) transistor. Memristors consisting of a vertically stacked van der Waals materials (multilayer graphene (MLG) and h-BN) exhibit a stable bipolar resistive switching behavior with a memory window more than three orders of magnitude due to the formation and rupture of the metallic filament within the h-BN layer. By controlling the resistance state of the h-BN memristor, the behaviors of the memtransistor can be programmed with a high switching ratio of approximate to 10(4), showing approximate to 16 pW standby power consumption. A multistate computing window and tunable current on/off ratio can be achieved by controlling the synaptic weight of the memristor, demonstrating that the presented 2D architecture can be exploited as a logic inverter device. The results pave the way toward the development of highly functional neuromorphic systems for the next-generation in-memory computing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.subject | DIELECTRIC-BREAKDOWN | - |
dc.subject | ARCHITECTURE | - |
dc.title | Programmable Multilevel Memtransistors Based on van der Waals Heterostructures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1002/aelm.201900333 | - |
dc.identifier.scopusid | 2-s2.0-85073577178 | - |
dc.identifier.wosid | 000479632700001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.5, no.10 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DIELECTRIC-BREAKDOWN | - |
dc.subject.keywordPlus | ARCHITECTURE | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | heterostructures | - |
dc.subject.keywordAuthor | in-memory computing | - |
dc.subject.keywordAuthor | memristors | - |
dc.subject.keywordAuthor | memtransistors | - |
dc.subject.keywordAuthor | neuromorphic | - |
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