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Low-temperature crystalline lead-free piezoelectric thin films grown on 2D perovskite nanosheet for flexible electronic device applications

Authors
Kim, Jong-HyunKweon, Sang HyoNahm, Sahn
Issue Date
10월-2019
Publisher
TSINGHUA UNIV PRESS
Keywords
lead-free piezoelectric thin films; low-temperature-deposition process; 2D nanosheet seed-layers; polymer substrates
Citation
NANO RESEARCH, v.12, no.10, pp.2559 - 2567
Indexed
SCIE
SCOPUS
Journal Title
NANO RESEARCH
Volume
12
Number
10
Start Page
2559
End Page
2567
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/62690
DOI
10.1007/s12274-019-2486-5
ISSN
1998-0124
Abstract
A monolayer of Sr2Nb3O10 (SNO) is deposited on the Pt/Ti/SiO2/Si (Pt-Si) or Pt/Ti/polyimide (Pt-PI) substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline (Na1-xKx)NbO3 (NKN) film at 350 degrees C. The crystalline NKN film is grown along the [001] direction on the SNO/Pt-Si (or SNO/Pt-PI) substrate. Due to the presence of oxygen vacancies in the SNO seed-layer, the NKN film exhibits low ferroelectric properties and large leakage current. To ameliorate these properties, the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300 degrees C, which removes the oxygen vacancies. Consequently, the NKN film deposited on this substrate exhibits promising electrical properties, namely a dielectric constant of 278, dissipation factor of 1.7%, a piezoelectric constant of 175 pmV(-1), and a leakage current density of 6.47 x 10(-7) Acm(-2) at -0.2 MV center dot cm(-1). Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350 degrees C. Hence, the NKN films grown on the SNO seed-layer at 350 degrees C can be applied to electronic devices with flexible polymer substrates.
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