Crystallization characteristics in heavily B2H6-doped amorphous Si thin films
DC Field | Value | Language |
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dc.contributor.author | Ahn, Ji-Su | - |
dc.contributor.author | Joo, Seung-Ki | - |
dc.contributor.author | Takaloo, Ashkan Vakilipour | - |
dc.contributor.author | Kim, Soonduck | - |
dc.contributor.author | Kim, Deok-kee | - |
dc.date.accessioned | 2021-09-01T06:13:33Z | - |
dc.date.available | 2021-09-01T06:13:33Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-09-15 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62863 | - |
dc.description.abstract | We have investigated the crystallization in amorphous silicon doped with B2H6 for varing doping levels under epsilon-field. Crystallization rate is classified into 3 stages based on the doping time, the mechanisms involved, and the rate determining step. The crystallization rate is saturated at around 10 mu m/h after 2 min doping time. The main mechanism for the rate saturation is due to the high internal epsilon-field caused by the heavy doping. The direction of the internal epsilon-field in the case of p-type doping is opposite to that of n-type doping, which causes the final saturated crystallization rate to be higher in the case of p-type doping, and lower in the case of n-type doping, compared to the intrinsic a-Si. The B2H6-doped samples with an epsilon-field show an uni-directional needle network microstructure with a preferred orientation of < 111 > direction in (110) plane. (C) 2019 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | INDUCED LATERAL-CRYSTALLIZATION | - |
dc.subject | POLYCRYSTALLINE-SILICON | - |
dc.subject | ELECTRIC-FIELD | - |
dc.subject | TRANSISTORS | - |
dc.subject | CHANNEL | - |
dc.subject | GROWTH | - |
dc.subject | TFTS | - |
dc.subject | RECRYSTALLIZATION | - |
dc.subject | FABRICATION | - |
dc.subject | STRESS | - |
dc.title | Crystallization characteristics in heavily B2H6-doped amorphous Si thin films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Soonduck | - |
dc.identifier.doi | 10.1016/j.jallcom.2019.06.105 | - |
dc.identifier.scopusid | 2-s2.0-85067233779 | - |
dc.identifier.wosid | 000474352000043 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.801, pp.352 - 359 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 801 | - |
dc.citation.startPage | 352 | - |
dc.citation.endPage | 359 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | INDUCED LATERAL-CRYSTALLIZATION | - |
dc.subject.keywordPlus | POLYCRYSTALLINE-SILICON | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordPlus | RECRYSTALLIZATION | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordAuthor | Polycrystalline silicon | - |
dc.subject.keywordAuthor | Microstructure | - |
dc.subject.keywordAuthor | Crystallization rate | - |
dc.subject.keywordAuthor | Boron doping | - |
dc.subject.keywordAuthor | Doping time | - |
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