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Via-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes

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dc.contributor.authorKim, Ho Young-
dc.contributor.authorLim, Chang Man-
dc.contributor.authorKim, Ki Seok-
dc.contributor.authorOh, Jeong Tak-
dc.contributor.authorJeong, Hwan-Hee-
dc.contributor.authorSong, June-O-
dc.contributor.authorSeong, Tae-Yeon-
dc.contributor.authorAmano, Hiroshi-
dc.date.accessioned2021-09-01T08:30:42Z-
dc.date.available2021-09-01T08:30:42Z-
dc.date.created2021-06-19-
dc.date.issued2019-08-22-
dc.identifier.issn2162-8769-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/63487-
dc.description.abstractWe investigated the effect of via-holes in the lead-frame on the reliability of blue flip-chip light-emitting diodes (FCLEDs). For bonding, conventional Sn-Ag(3.0%)-Cu(0.5%) solder (SAC) and Ag sintered paste were adopted. Lateral LED, conventional FCLED (c-FCLED), and via-hole FCLED gave efficacies of 218.5, 221.6 and 225 1m/W at 30 mA. The lateral LED sample (bonding material: silicone), c-FCLED sample (SAC), via-hole-type sample (Ag sinter), and via-hole-type sample (SAC) exhibited total thermal resistance of 15.24, 10.19, 8.95, and 11.79 K/W, respectively. The humidity/temperature/H2S gas reliability examinations showed that unlike the via-hole-type samples, the lumen of the c-FCLED was fallen by 15.0% after exposure for 500 h. Furthermore, the c-FCLED exhibited a 19.6% higher forward voltage than the via-hole FCLED after 1,000 thermal-cycles. SEM results showed that unlike the via-hole type FCLED, the c-FCLED underwent cracking after thermal cycle of 1000 times. (C) 2019 The Electrochemical Society.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELECTROCHEMICAL SOC INC-
dc.subjectHIGHLY REFLECTIVE ITO/DBR-
dc.subjectP-TYPE-
dc.subjectLEDS-
dc.subjectENHANCEMENT-
dc.subjectRESISTANCE-
dc.subjectCONTACTS-
dc.subjectSILICON-
dc.subjectOUTPUT-
dc.subjectCU-
dc.titleVia-Hole-Type Flip-Chip Packaging to Improve the Thermal Characteristics and Reliability of Blue Light Emitting Diodes-
dc.typeArticle-
dc.contributor.affiliatedAuthorSeong, Tae-Yeon-
dc.identifier.doi10.1149/2.0171909jss-
dc.identifier.scopusid2-s2.0-85072663617-
dc.identifier.wosid000482553000001-
dc.identifier.bibliographicCitationECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.8, no.9, pp.Q165 - Q170-
dc.relation.isPartOfECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.citation.titleECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY-
dc.citation.volume8-
dc.citation.number9-
dc.citation.startPageQ165-
dc.citation.endPageQ170-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusHIGHLY REFLECTIVE ITO/DBR-
dc.subject.keywordPlusP-TYPE-
dc.subject.keywordPlusLEDS-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusCONTACTS-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusOUTPUT-
dc.subject.keywordPlusCU-
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