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InGaN/GaN light emitting diodes grown on nanoimprint-based hollow-patterned sapphire substrates

Authors
Sung, Young HoonPark, JaeminChoi, Eun SeoChung, Tae-HoonLee, Tae WonKim, Hee JunBaik, Jeong MinLee, Heon
Issue Date
15-8월-2019
Publisher
ELSEVIER
Keywords
Light emitting diode; Micro LEDs; Nano imprint; Hollow pattern; Hollow LEDs
Citation
MICROELECTRONIC ENGINEERING, v.216
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONIC ENGINEERING
Volume
216
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/63515
DOI
10.1016/j.mee.2019.111082
ISSN
0167-9317
Abstract
In this study, conical-shaped hollow-patterned sapphire substrates (HPSSs) with three different sizes, were fabricated and used as substrates for blue light emitting diode (LED). The HPSSs were fabricated on 2-inch diameter sapphire wafers by nanoimprint technique. Blue LED structures were grown on the HPSS and flat sapphire wafer, in order to investigate the effect of hollow patterns on sapphire substrate. The photoluminescence (PL), electroluminescence (EL) and X-ray diffraction analysis were used to characterize the blue LED structures. Luminescence efficiency of LED structure, grown on HPSS wafer was improved, compared to identical LED structure grown on conventional flat sapphire wafer. 4.5 times stronger PL and 1.7 times stronger EL intensities were observed from GaN based LED structures grown on HPSS.
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공과대학 (신소재공학부)
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