Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Magnetic skyrmion field-effect transistors

Authors
Hong, Ik-SunLee, Kyung-Jin
Issue Date
12-8월-2019
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.115, no.7
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
115
Number
7
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/63533
DOI
10.1063/1.5110752
ISSN
0003-6951
Abstract
Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a gate-controlled Dzyaloshinskii-Moriya interaction. A key working principle of the proposed skyrmion field-effect transistor is a large transverse motion of skyrmions, caused by an effective equilibrium dampinglike spin-orbit torque due to spatially inhomogeneous Dzyaloshinskii-Moriya interaction. This large transverse motion can be categorized as the skyrmion Hall effect but has been unrecognized previously. The proposed device is capable of performing multibit operation and Boolean functions and thus is expected to serve as a low-power logic device based on magnetic solitons.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE