Controlling the threshold voltage of beta-Ga2O3 field-effect transistors via remote fluorine plasma treatment
DC Field | Value | Language |
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dc.contributor.author | Kim, Janghyuk | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-01T09:38:38Z | - |
dc.date.available | 2021-09-01T09:38:38Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-08-07 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/63548 | - |
dc.description.abstract | beta-phase gallium oxide (beta-Ga2O3), emerging as an ultra-wide bandgap semiconductor, suffers from negative threshold voltage (V-th) characteristics, which only allow depletion-mode (D-mode) operation; however, enhancement-mode (E-mode) operation is preferred to ensure fail-safe operation and simplify circuit topologies. Therefore, in this study, the V-th is controlled via remote fluorine plasma treatment in beta-Ga2O3 metal-insulator-semiconductor field-effect transistors (MISFETs). Under the top-gate modulation, the V-th of the fluorinated beta-Ga2O3 MISFET was positively shifted by +4 V, exhibiting a high on/off ratio (similar to 10(7)) and low su beta-threshold swing (175 mV dec(-1)). Under the double-gate modulation, the E-mode beta-Ga2O3 MISFET was demonstrated, where the V-th was estimated to be +2.2 V. The obtained results suggest that the fluorine plasma treatment is an effective method to control the V-th of the beta-Ga2O3 FETs from D-mode to E-mode, pointing out monolithic integration of beta-Ga2O3 transistors for future smart power electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | THIN-FILM-TRANSISTOR | - |
dc.subject | ALGAN/GAN HEMTS | - |
dc.subject | MODE | - |
dc.title | Controlling the threshold voltage of beta-Ga2O3 field-effect transistors via remote fluorine plasma treatment | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c9tc02468a | - |
dc.identifier.scopusid | 2-s2.0-85069767984 | - |
dc.identifier.wosid | 000477683200040 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.29, pp.8855 - 8860 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 7 | - |
dc.citation.number | 29 | - |
dc.citation.startPage | 8855 | - |
dc.citation.endPage | 8860 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM-TRANSISTOR | - |
dc.subject.keywordPlus | ALGAN/GAN HEMTS | - |
dc.subject.keywordPlus | MODE | - |
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