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GaN-based Light Emitting Diodes with Graded-index layer via Nanosphere Lithography Technique
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Ji Hyun | - |
| dc.date.accessioned | 2021-09-01T10:36:58Z | - |
| dc.date.available | 2021-09-01T10:36:58Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/63726 | - |
| dc.publisher | MRS | - |
| dc.title | GaN-based Light Emitting Diodes with Graded-index layer via Nanosphere Lithography Technique | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Kim, Ji Hyun | - |
| dc.identifier.bibliographicCitation | 2009 MRS Fall Meeting | - |
| dc.relation.isPartOf | 2009 MRS Fall Meeting | - |
| dc.citation.title | 2009 MRS Fall Meeting | - |
| dc.citation.conferencePlace | US | - |
| dc.citation.conferenceDate | 2009-11-30 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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