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Electrical properties of Amorphous Inium Gallium Zinc Oxide thin film transistors on glass by rf sputtering
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ju, Byeongkwon | - |
| dc.date.accessioned | 2021-09-01T10:47:14Z | - |
| dc.date.available | 2021-09-01T10:47:14Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/63900 | - |
| dc.publisher | KIST | - |
| dc.title | Electrical properties of Amorphous Inium Gallium Zinc Oxide thin film transistors on glass by rf sputtering | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ju, Byeongkwon | - |
| dc.identifier.bibliographicCitation | Electrical properties of Amorphous Inium Gallium Zinc Oxide thin film transistors on glass by rf sputtering | - |
| dc.relation.isPartOf | Electrical properties of Amorphous Inium Gallium Zinc Oxide thin film transistors on glass by rf sputtering | - |
| dc.citation.title | Electrical properties of Amorphous Inium Gallium Zinc Oxide thin film transistors on glass by rf sputtering | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2009-11-08 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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