Hydrogen plasma treatment of <bold>beta</bold>-Ga2O3: Changes in electrical properties and deep trap spectra
DC Field | Value | Language |
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dc.contributor.author | Polyakov, A. Y. | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Yakimov, E. B. | - |
dc.contributor.author | Shchemerov, I. V. | - |
dc.contributor.author | Chernykh, A. V. | - |
dc.contributor.author | Kochkova, A. I. | - |
dc.contributor.author | Vasilev, A. A. | - |
dc.contributor.author | Ren, F. | - |
dc.contributor.author | Carey, P. H. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.date.accessioned | 2021-09-01T11:33:10Z | - |
dc.date.available | 2021-09-01T11:33:10Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-07-15 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/64104 | - |
dc.description.abstract | The effects of hydrogen plasma treatment of beta-Ga2O3 grown by halide vapor phase epitaxy and doped with Si are reported. Samples subjected to H plasma exposure at 330 degrees C developed a wide (similar to 2.5 mu m-thick) region near the surface, depleted of electrons at room temperature. The thickness of the layer is in reasonable agreement with the estimated hydrogen penetration depth in beta-Ga2O3 based on previous deuterium profiling experiments. Admittance spectroscopy and photoinduced current transient spectroscopy measurements place the Fermi level pinning position in the H treated film near E-c-1.05eV. Annealing at 450 degrees C decreased the thickness of the depletion layer to 1.3 mu m at room temperature and moved the Fermi level pinning position to E-c-0.8eV. Further annealing at 550 degrees C almost restored the starting shallow donor concentration and the spectra of deep traps dominated by E-c-0.8eV and E-c-1.05eV observed before hydrogen treatment. It is suggested that hydrogen plasma exposure produces surface damage in the near-surface region and passivates or compensates shallow donors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | SPECTROSCOPY | - |
dc.subject | BULK | - |
dc.title | Hydrogen plasma treatment of <bold>beta</bold>-Ga2O3: Changes in electrical properties and deep trap spectra | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1063/1.5108790 | - |
dc.identifier.scopusid | 2-s2.0-85068974006 | - |
dc.identifier.wosid | 000476586900022 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.115, no.3 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 115 | - |
dc.citation.number | 3 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | BULK | - |
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