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Influence of the density of crack-initiating defect on crack-spasing for the GaN on Si(111)substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | BYUN, Dong Jin | - |
| dc.date.accessioned | 2021-09-01T13:08:49Z | - |
| dc.date.available | 2021-09-01T13:08:49Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/64441 | - |
| dc.publisher | Society of LED and Solid State light , The Korean Vacuum society | - |
| dc.title | Influence of the density of crack-initiating defect on crack-spasing for the GaN on Si(111)substrate | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | BYUN, Dong Jin | - |
| dc.identifier.bibliographicCitation | The 8th international conference on nitride semiconductors | - |
| dc.relation.isPartOf | The 8th international conference on nitride semiconductors | - |
| dc.citation.title | The 8th international conference on nitride semiconductors | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2009-10-18 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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