Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir-Blodgett method for a gate insulator
DC Field | Value | Language |
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dc.contributor.author | Kang, Leeseung | - |
dc.contributor.author | An, HyeLan | - |
dc.contributor.author | Jung, Seungmin | - |
dc.contributor.author | Kim, Seyul | - |
dc.contributor.author | Nahm, Sahn | - |
dc.contributor.author | Kim, Dae-guen | - |
dc.contributor.author | Lee, Chan Gi | - |
dc.date.accessioned | 2021-09-01T14:56:22Z | - |
dc.date.available | 2021-09-01T14:56:22Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-05-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/65421 | - |
dc.description.abstract | One of the most demanding challenges in next-generation thin-film transistors (TFTs) is the development of new materials for high-performance devices with higher speed and lower operation voltage. To drive a TFT at a low power, it is important to form an insulating layer as a thin film with good characteristics. Langmuir-Blodgett (LB) technique is one of the most suitable methods for controlling and developing two-dimensional nanomaterials. In the LB method, a layer only one molecule thick (Langmuir monolayer) is spread at the air/water interface and transferred onto the surface of a solid substrate and the process can be repeated several times with the same substrate to deposit multilayer films. In this study, a Ca2Nb3O10 (CNO) dielectric layer was fabricated using the LB method, and a CdS active layer was fabricated using the chemical bath deposition (CBD) method to obtain the final structure of CdS-TFTs. CNO dielectric layers have low leakage current density (7.26 x 10(-7)A cm(-2)) and a high capacitance density of 944 nF cm(-2) at 100 kHz. Therefore, it is considered that the CNO films produced using the LB method are suitable as an insulating layer material. Furthermore, the CdS-TFTs exhibited good performance with a low threshold voltage of 0.596 V, I-on/I-off current ratio of 10(6), subthreshold slope of 0.05 V dec(-1), and high mobility of 0.428 cm(2) V-1 S-1 at operating voltages less than 2 V. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | GLASS | - |
dc.title | Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir-Blodgett method for a gate insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1016/j.apsusc.2019.01.132 | - |
dc.identifier.scopusid | 2-s2.0-85060198806 | - |
dc.identifier.wosid | 000459458600043 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.476, pp.374 - 377 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 476 | - |
dc.citation.startPage | 374 | - |
dc.citation.endPage | 377 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordAuthor | Thin-film transistor | - |
dc.subject.keywordAuthor | Low-voltage operating | - |
dc.subject.keywordAuthor | Ca2Nb3O10 nanosheets | - |
dc.subject.keywordAuthor | CdS active layer | - |
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