Spontaneous Doping at the Polymer-Polymer Interface for High Performance Organic Transistors
DC Field | Value | Language |
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dc.contributor.author | Shin, Eun-Sol | - |
dc.contributor.author | Park, Won-Tae | - |
dc.contributor.author | Kwon, Young-Wan | - |
dc.contributor.author | Xu, Yong | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.date.accessioned | 2021-09-01T16:16:48Z | - |
dc.date.available | 2021-09-01T16:16:48Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-04-03 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66054 | - |
dc.description.abstract | Low-k amorphous fluorinated polymers such as poly(perfluoroalkenylvinyl ether) (CYTOP) have widely been used as gate dielectrics for organic field-effect transistors (OFETs) because of their strong hydrophobicity to prevent the penetration of moisture and other contaminants and their perfect solvent orthogonality with organic semiconductors. Here, we report a new functionality of the fluorinated low-k polymer dielectrics, which is spontaneous p doping at the dielectric semiconductor interface in OFETs. This functionality makes the ambipolar charge transport a unipolar p type. In the OFETs based on indacenodithiophene-co-benzothiadiazole and diketopyrrolopyrrole-thieno[3,2-b]thiophene, the charge transport is obviously ambipolar when paired with common polymer dielectrics such as poly(methyl methacrylate); however, it is perfectly modulated to the unipolar p type by applying the fluorinated dielectrics of CYTOP and poly(tetrafluoroethylene) (Teflon). We propose that this modulation of charge transport results from the rearrangement of C-F bonds at the interface between the fluorine-containing dielectrics and the conjugated polymer semiconductors by proper thermal annealing. These well-aligned dipole moments lead to an abrupt downshift of the Fermi level of the semiconductor toward the highest occupied molecular orbitals near the dielectric-semiconductor interface, which provides a p-doping effect on the channel transport and results in unipolar p-type characteristics in the composed OFETs. This study reveals a new functionality of the fluorinated dielectrics for future organic electronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | CHARGE-TRANSPORT | - |
dc.subject | N-CHANNEL | - |
dc.subject | AMBIPOLAR | - |
dc.subject | ELECTRON | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | DISORDER | - |
dc.subject | TOP | - |
dc.subject | DENSITY | - |
dc.title | Spontaneous Doping at the Polymer-Polymer Interface for High Performance Organic Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Young-Wan | - |
dc.identifier.doi | 10.1021/acsami.8b21090 | - |
dc.identifier.scopusid | 2-s2.0-85063439400 | - |
dc.identifier.wosid | 000463843900060 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.13, pp.12709 - 12716 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 11 | - |
dc.citation.number | 13 | - |
dc.citation.startPage | 12709 | - |
dc.citation.endPage | 12716 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | N-CHANNEL | - |
dc.subject.keywordPlus | AMBIPOLAR | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | DISORDER | - |
dc.subject.keywordPlus | TOP | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordAuthor | organic field-effect transistors | - |
dc.subject.keywordAuthor | fluorinated low-k gate dielectric | - |
dc.subject.keywordAuthor | doping effect | - |
dc.subject.keywordAuthor | amorphous polymer | - |
dc.subject.keywordAuthor | charge carrier transport | - |
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