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Effect of post annealing a-Si:H on Interface Passivation in Heterojunction Silicon Solar Cells by Hot-Wire CVD
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KIM, Donghwan | - |
| dc.date.accessioned | 2021-09-01T16:37:16Z | - |
| dc.date.available | 2021-09-01T16:37:16Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66273 | - |
| dc.publisher | 서울산업대학교 | - |
| dc.title | Effect of post annealing a-Si:H on Interface Passivation in Heterojunction Silicon Solar Cells by Hot-Wire CVD | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | KIM, Donghwan | - |
| dc.identifier.bibliographicCitation | The 12th Joint Symposium on Electronic Materials | - |
| dc.relation.isPartOf | The 12th Joint Symposium on Electronic Materials | - |
| dc.citation.title | The 12th Joint Symposium on Electronic Materials | - |
| dc.citation.conferencePlace | KO | - |
| dc.citation.conferenceDate | 2009-08-23 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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