Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method
DC Field | Value | Language |
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dc.contributor.author | Im, Mir | - |
dc.contributor.author | Lee, Woong-Hee | - |
dc.contributor.author | Kweon, Sang-Hyo | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Nahm, Sahn | - |
dc.date.accessioned | 2021-09-01T17:00:03Z | - |
dc.date.available | 2021-09-01T17:00:03Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 0955-2219 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66487 | - |
dc.description.abstract | TiNbO5 (TNO) thin films were deposited by electrophoresis at room temperature by using TNO- nanosheets. These TNO films exhibited a large (001) interplanar distance (1.18 nm) owing to the presence of TBA(+) between the TNO layers. The TBA(+), which were used to synthesize the TNO- nanosheets, were removed from the TNO film after annealing at 600 degrees C. Two types of structures were developed in the film annealed at 600 degrees C: type-1 and type-2, which revealed (001) interplanar distances of 0.52 and 0.71 nm, respectively. The TNO film annealed at 600 degrees C showed a dielectric constant of 48.5, low dielectric loss (0.02), and small leakage current density of 4.16 x 10(-7) A/cm(2) at 0.6 MV/cm. The dielectric properties were stable with respect to the film thickness and the applied electric field; the dielectric and insulation properties were maintained up to 300 degrees C. Therefore, TNO films are good candidates for high-temperature capacitors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.subject | HIGH-KAPPA RESPONSE | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.subject | TEMPERATURE | - |
dc.subject | OXIDE | - |
dc.subject | DEPOSITION | - |
dc.title | Growth behavior and thermally stable electrical properties of TiNbO5 nanosheet thin films grown using the electrophoretic method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1016/j.jeurceramsoc.2018.12.057 | - |
dc.identifier.scopusid | 2-s2.0-85059152526 | - |
dc.identifier.wosid | 000457819600057 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.39, no.4, pp.1149 - 1155 | - |
dc.relation.isPartOf | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | - |
dc.citation.title | JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | - |
dc.citation.volume | 39 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1149 | - |
dc.citation.endPage | 1155 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | HIGH-KAPPA RESPONSE | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | Inorganic nanosheets | - |
dc.subject.keywordAuthor | TiNbO5 film | - |
dc.subject.keywordAuthor | Electrophoresis | - |
dc.subject.keywordAuthor | Robust dielectric | - |
dc.subject.keywordAuthor | High temperature capacitor | - |
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