The emergence and prospects of deep-ultraviolet light-emitting diode technologies
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kneissl, Michael | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Han, Jung | - |
dc.contributor.author | Amano, Hiroshi | - |
dc.date.accessioned | 2021-09-01T17:08:12Z | - |
dc.date.available | 2021-09-01T17:08:12Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 1749-4885 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66560 | - |
dc.description.abstract | By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210-400 nm), making ultraviolet light-emitting diodes perfectly suited to applications across a wide number of fields, whether biological, environmental, industrial or medical. However, technical developments notwithstanding, deep-ultraviolet light-emitting diodes still exhibit relatively low external quantum efficiencies because of properties intrinsic to aluminium-rich group III nitride materials. Here, we review recent progress in the development of AlGaN-based deep-ultraviolet light-emitting devices. We also describe the key obstacles to enhancing their efficiency and how to improve their performance in terms of defect density, carrier-injection efficiency, light extraction efficiency and heat dissipation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.subject | ALN NUCLEATION LAYER | - |
dc.subject | P-TYPE CONDUCTION | - |
dc.subject | UV LEDS | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | THREADING DISLOCATIONS | - |
dc.subject | ALUMINUM NITRIDE | - |
dc.subject | QUANTUM-WELLS | - |
dc.subject | NM EMISSION | - |
dc.subject | ALGAN | - |
dc.subject | GAN | - |
dc.title | The emergence and prospects of deep-ultraviolet light-emitting diode technologies | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1038/s41566-019-0359-9 | - |
dc.identifier.scopusid | 2-s2.0-85063326272 | - |
dc.identifier.wosid | 000462042800012 | - |
dc.identifier.bibliographicCitation | NATURE PHOTONICS, v.13, no.4, pp.233 - 244 | - |
dc.relation.isPartOf | NATURE PHOTONICS | - |
dc.citation.title | NATURE PHOTONICS | - |
dc.citation.volume | 13 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 233 | - |
dc.citation.endPage | 244 | - |
dc.type.rims | ART | - |
dc.type.docType | Review | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ALN NUCLEATION LAYER | - |
dc.subject.keywordPlus | P-TYPE CONDUCTION | - |
dc.subject.keywordPlus | UV LEDS | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | THREADING DISLOCATIONS | - |
dc.subject.keywordPlus | ALUMINUM NITRIDE | - |
dc.subject.keywordPlus | QUANTUM-WELLS | - |
dc.subject.keywordPlus | NM EMISSION | - |
dc.subject.keywordPlus | ALGAN | - |
dc.subject.keywordPlus | GAN | - |
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