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Significantly Increased Photoresponsivity of WSe2-Based Transistors through Hybridization with Gold-Tetraphenylporphyrin as Efficient n-Type Dopant

Authors
Lee, Dong SeopKim, Jun YoungShin, Doe YongLee, YongjunKim, JeongyongLee, Suk JoongJoo, Jinsoo
Issue Date
4월-2019
Publisher
WILEY
Keywords
mobility; photoresponsivity; porphyrin derivatives; transistors; WSe2
Citation
ADVANCED ELECTRONIC MATERIALS, v.5, no.4
Indexed
SCIE
SCOPUS
Journal Title
ADVANCED ELECTRONIC MATERIALS
Volume
5
Number
4
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/66574
DOI
10.1002/aelm.201800802
ISSN
2199-160X
Abstract
The control of electrical and optical characteristics of 2D transition-metal dichalcogenides (TMDCs) through charge doping is essential to optimize the performances of optoelectronic devices based on TMDCs. In this study, a few-layer tungsten diselenide (WSe2) is hybridized with organic gold(III)-tetraphenylporphyrin (Au-TPP) using a simple drop-casting method. Nanoscale optical characteristics, measured by laser confocal microscopy, reveal that the photoluminescence intensity and exciton lifetime of Au-TPP decrease after the hybridization with WSe2, which suggests the charge transfer from Au-TPP to WSe2. For optoelectronic applications, photoresponsive field-effect transistors (FETs) based on pristine WSe2 and WSe2/Au-TPP hybrids are fabricated and compared. After the hybridization with Au-TPP, the charge transport characteristics of the WSe2-based FETs change to severe n-type characteristics including a negative shift of the threshold voltage and increase in electron mobility. Significantly enhanced photoresponsivities (up to 310 times) are observed for the WSe2/Au-TPPbased FETs owing to their efficient light absorption and charge transfer from Au-TPP to WSe2.
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