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재널 물질에 따른 GAA Field Effect Transistor의 Random Telegreph Noise (RTN) 특성분석

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dc.contributor.authorLEE Jae Woo-
dc.date.accessioned2021-08-27T11:57:44Z-
dc.date.available2021-08-27T11:57:44Z-
dc.date.created2021-04-22-
dc.date.issued2020-02-14-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/6810-
dc.publisher한국 반도체 산업협회-
dc.title재널 물질에 따른 GAA Field Effect Transistor의 Random Telegreph Noise (RTN) 특성분석-
dc.title.alternative영어, 한국어-
dc.typeConference-
dc.contributor.affiliatedAuthorLEE Jae Woo-
dc.identifier.bibliographicCitation제 27회 한국 반도체학술대회-
dc.relation.isPartOf제 27회 한국 반도체학술대회-
dc.relation.isPartOf제 27회 한국 반도체학술대회 초록집-
dc.citation.title제 27회 한국 반도체학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2020-02-12-
dc.type.rimsCONF-
dc.description.journalClass2-
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