Defect States Determining Dynamic Trapping-Detrapping in beta-Ga2O3 Field-Effect Transistors
DC Field | Value | Language |
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dc.contributor.author | Polyakov, Alexander Y. | - |
dc.contributor.author | Smirnov, Nikolai B. | - |
dc.contributor.author | Shchemerov, Ivan V. | - |
dc.contributor.author | Chernykh, Sergey V. | - |
dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Kochkova, Anastasia | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-01T21:28:09Z | - |
dc.date.available | 2021-09-01T21:28:09Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-01-16 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68274 | - |
dc.description.abstract | beta-Ga2O3 is an intriguing material as a channel layer for the next generation high power transistors. To assess the device level effects of the traps in beta-Ga2O3, the dynamic dispersion characteristics of a back-gated nanobelt beta-Ga2O3 field-effect transistor prepared by mechanical exfoliation from a bulk beta-Ga2O3 single crystal was investigated by the dependence of threshold voltage hysteresis on transistor transfer characteristics on the gate voltage ramp, pulsed current-voltage characteristics, and current deep level transient spectroscopy measurements. Current lag in the off-state was related to the presence of electron traps at E-c-0.75 eV, which are also present in bulk crystals and ascribed to Fe impurities or native defects. In the on-state, drain current lag was caused by surface traps with levels at E-c-(0.95-1.1) eV. Optimized passivation layers for beta-Ga2O3 are required to prevent the current collapse because the device performances are affected by the environmental molecules adsorbed on the surface. Our work can pave a way to mitigating the defect-related current collapse in beta-Ga2O3 electronic devices. (C) The Author(s) 2019. Published by ECS. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | BLIND ULTRAVIOLET PHOTODETECTOR | - |
dc.subject | NANOSHEETS | - |
dc.subject | CRYSTAL | - |
dc.subject | POWER | - |
dc.title | Defect States Determining Dynamic Trapping-Detrapping in beta-Ga2O3 Field-Effect Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2.0031907jss | - |
dc.identifier.scopusid | 2-s2.0-85063266905 | - |
dc.identifier.wosid | 000455866900001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.8, no.7, pp.Q3013 - Q3018 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 8 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | Q3013 | - |
dc.citation.endPage | Q3018 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BLIND ULTRAVIOLET PHOTODETECTOR | - |
dc.subject.keywordPlus | NANOSHEETS | - |
dc.subject.keywordPlus | CRYSTAL | - |
dc.subject.keywordPlus | POWER | - |
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