Radiation damage effects in Ga2O3 materials and devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jihyun | - |
dc.contributor.author | Pearton, Stephen J. | - |
dc.contributor.author | Fares, Chaker | - |
dc.contributor.author | Yang, Jiancheng | - |
dc.contributor.author | Ren, Fan | - |
dc.contributor.author | Kim, Suhyun | - |
dc.contributor.author | Polyakov, Alexander Y. | - |
dc.date.accessioned | 2021-09-01T21:36:08Z | - |
dc.date.available | 2021-09-01T21:36:08Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-01-07 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68323 | - |
dc.description.abstract | The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially beta-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of beta-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | DOPED BETA-GA2O3 LAYERS | - |
dc.subject | ELECTRICAL CHARACTERIZATION | - |
dc.subject | SINGLE | - |
dc.subject | SI | - |
dc.subject | POWER | - |
dc.subject | AMORPHIZATION | - |
dc.subject | MOVPE | - |
dc.title | Radiation damage effects in Ga2O3 materials and devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c8tc04193h | - |
dc.identifier.scopusid | 2-s2.0-85059055676 | - |
dc.identifier.wosid | 000454087900017 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.1, pp.10 - 24 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 10 | - |
dc.citation.endPage | 24 | - |
dc.type.rims | ART | - |
dc.type.docType | Review | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DOPED BETA-GA2O3 LAYERS | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERIZATION | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | AMORPHIZATION | - |
dc.subject.keywordPlus | MOVPE | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.