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Role of Al₂O₃buffer layer for ZnO-based transparent thin film transistors with HfO₂gate-insulator
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ju, Byeongkwon | - |
| dc.date.accessioned | 2021-09-01T22:03:32Z | - |
| dc.date.available | 2021-09-01T22:03:32Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68495 | - |
| dc.publisher | MRS | - |
| dc.title | Role of Al₂O₃buffer layer for ZnO-based transparent thin film transistors with HfO₂gate-insulator | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ju, Byeongkwon | - |
| dc.identifier.bibliographicCitation | 2nd International Symposium on Transparent Conductive Oxides 2008 | - |
| dc.relation.isPartOf | 2nd International Symposium on Transparent Conductive Oxides 2008 | - |
| dc.citation.title | 2nd International Symposium on Transparent Conductive Oxides 2008 | - |
| dc.citation.conferencePlace | GR | - |
| dc.citation.conferenceDate | 2008-10-22 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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