Field-plate engineering for high breakdown voltage beta-Ga2O3 nanolayer field-effect transistors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Hyoung Woo | - |
dc.contributor.author | Kang, In Ho | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-01T22:49:00Z | - |
dc.date.available | 2021-09-01T22:49:00Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68963 | - |
dc.description.abstract | The narrow voltage swing of a nanoelectronic device limits its implementations in electronic circuits. Nanolayer -Ga2O3 has a superior breakdown field of approximately 8 MV cm(-1), making it an ideal candidate for a next-generation power device nanomaterial. In this study, a field modulating plate was introduced into a -Ga2O3 nano-field-effect transistor (nanoFET) to engineer the distribution of electric fields, wherein the off-state three-terminal breakdown voltage was reported to be 314 V. -Ga2O3 flakes were separated from a single-crystal bulk substrate using a mechanical exfoliation method. The layout of the field modulating plate was optimized through a device simulation to effectively distribute the peak electric fields. The field-plated -Ga2O3 nanoFETs exhibited n-type behaviors with a high output current saturation, exhibiting excellent switching characteristics with a threshold voltage of -3.8 V, a subthreshold swing of 101.3 mV dec(-1), and an on/off ratio greater than 10(7). The -Ga2O3 nanoFETs with a high breakdown voltage of over 300 V could pave a way for downsizing power electronic devices, enabling the economization of power systems. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | POWER | - |
dc.subject | GANHFET | - |
dc.subject | DESIGN | - |
dc.subject | FILMS | - |
dc.title | Field-plate engineering for high breakdown voltage beta-Ga2O3 nanolayer field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1039/c9ra01163c | - |
dc.identifier.scopusid | 2-s2.0-85063582422 | - |
dc.identifier.wosid | 000464595600041 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.9, no.17, pp.9678 - 9683 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 9 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 9678 | - |
dc.citation.endPage | 9683 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | GANHFET | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | FILMS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.