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Structural analysis on GaN grown on patterned N+ing implanted sapphire substrate

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-09-02T01:45:35Z-
dc.date.available2021-09-02T01:45:35Z-
dc.date.created2021-04-22-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/70902-
dc.publisherKOPTI-
dc.titleStructural analysis on GaN grown on patterned N+ing implanted sapphire substrate-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationproceeding of THe 2nd international conference on display and solid state lighting-
dc.relation.isPartOfproceeding of THe 2nd international conference on display and solid state lighting-
dc.relation.isPartOfproceeding of THe 2nd international conference on display and solid state lighting-
dc.citation.titleproceeding of THe 2nd international conference on display and solid state lighting-
dc.citation.conferencePlaceKO-
dc.citation.conferencePlaceseoul korea (coex)-
dc.citation.conferenceDate2008-01-30-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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