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Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | PARK, JUNG HO | - |
| dc.date.accessioned | 2021-09-02T01:47:43Z | - |
| dc.date.available | 2021-09-02T01:47:43Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/70935 | - |
| dc.publisher | The Japan Society of applied physics | - |
| dc.title | Effects of Pre-treatment on Passivation of AlGaN/GaN on Silicon HEMTs | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | PARK, JUNG HO | - |
| dc.identifier.bibliographicCitation | International conference on Solid State Devices and Materials | - |
| dc.relation.isPartOf | International conference on Solid State Devices and Materials | - |
| dc.citation.title | International conference on Solid State Devices and Materials | - |
| dc.citation.conferencePlace | JA | - |
| dc.citation.conferencePlace | 일본 센다이 | - |
| dc.citation.conferenceDate | 2009-10-07 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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