Electrical properties, structural properties, and deep trap spectra of thin alpha-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates
DC Field | Value | Language |
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dc.contributor.author | Jeon, Dae-Woo | - |
dc.contributor.author | Son, Hoki | - |
dc.contributor.author | Hwang, Jonghee | - |
dc.contributor.author | Polyakov, A. Y. | - |
dc.contributor.author | Smirnov, N. B. | - |
dc.contributor.author | Shchemerov, I. V. | - |
dc.contributor.author | Chernykh, A. V. | - |
dc.contributor.author | Kochkova, A. I. | - |
dc.contributor.author | Pearton, S. J. | - |
dc.contributor.author | Lee, In-Hwan | - |
dc.date.accessioned | 2021-09-02T02:31:21Z | - |
dc.date.available | 2021-09-02T02:31:21Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71374 | - |
dc.description.abstract | Undoped epitaxial films of alpha-Ga2O3 were grown on basal plane sapphire substrates by halide vapor phase epitaxy (HVPE) in three different modes: standard HVPE, HVPE with constant flow of Ga and pulsed supply of O-2 (O-2-control growth regime), and with constant flow of O-2 and pulsed delivery of Ga (Ga-control growth fashion). The best crystalline quality as judged by x-ray symmetric and asymmetric reflection half-widths and by atomic force microscopy morphology profiling was obtained with the O-2-control deposition, and these results appear to be the best so far reported for alpha-Ga(2)O(3)films. All grown alpha-Ga2O3 epilayers were high-resistivity n-type, with the Fermi level pinned near E-c - 1 eV deep traps. Photoinduced current transient spectra also showed the existence in standard HVPE samples and samples grown under the O-2-control pulsed growth conditions of deep hole traps with levels near E-v + 1.4 eV whose density was suppressed in the Ga-control pulsed HVPE samples. The levels of the dominant deep traps in these alpha-Ga2O3 samples are close to the position of dominant electron and hole traps in well documented alpha-Ga2O3 crystals and films. (C) 2018 Author(s). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | GALLIUM OXIDE | - |
dc.subject | GAN | - |
dc.subject | ALPHA | - |
dc.subject | BULK | - |
dc.title | Electrical properties, structural properties, and deep trap spectra of thin alpha-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, In-Hwan | - |
dc.identifier.doi | 10.1063/1.5075718 | - |
dc.identifier.scopusid | 2-s2.0-85059320570 | - |
dc.identifier.wosid | 000454616100014 | - |
dc.identifier.bibliographicCitation | APL MATERIALS, v.6, no.12 | - |
dc.relation.isPartOf | APL MATERIALS | - |
dc.citation.title | APL MATERIALS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | GALLIUM OXIDE | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | ALPHA | - |
dc.subject.keywordPlus | BULK | - |
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