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The failure analysis of PRAM device based on Ge2Sb2Te5

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dc.contributor.authorLee, Heon-
dc.date.accessioned2021-09-02T02:58:42Z-
dc.date.available2021-09-02T02:58:42Z-
dc.date.created2021-04-22-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/71640-
dc.publisher대한금속재료학회-
dc.titleThe failure analysis of PRAM device based on Ge2Sb2Te5-
dc.typeConference-
dc.contributor.affiliatedAuthorLee, Heon-
dc.identifier.bibliographicCitation2008 대한금속재료학회 추계학술대회-
dc.relation.isPartOf2008 대한금속재료학회 추계학술대회-
dc.citation.title2008 대한금속재료학회 추계학술대회-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2008-10-24-
dc.type.rimsCONF-
dc.description.journalClass2-
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공과대학 (신소재공학부)
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