A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors
DC Field | Value | Language |
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dc.contributor.author | Pyeon, Jung Joon | - |
dc.contributor.author | Cho, Cheol Jin | - |
dc.contributor.author | Jeong, Doo Seok | - |
dc.contributor.author | Kim, Jin-Sang | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Kim, Seong Keun | - |
dc.date.accessioned | 2021-09-02T04:01:18Z | - |
dc.date.available | 2021-09-02T04:01:18Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-11-09 | - |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71867 | - |
dc.description.abstract | Rutile TiO2, a high temperature phase, has attracted interest as a capacitor dielectric in dynamic random-access memories (DRAMs). Despite its high dielectric constant of >80, large leakage currents caused by a low Schottky barrier height at the TiO2/electrode interface have hindered the use of rutile TiO2 as a commercial DRAM capacitor. Here, we propose a new Ru-Pt alloy electrode to increase the height of the Schottky barrier. The Ru-Pt mixed layer was grown by atomic layer deposition. The atomic ratio of Ru/Pt varied in the entire range from 100 at.% Ru to 100 at.% Pt. Rutile TiO(2)films were inductively formed only on the Ru-Pt layer containing <= 43 at.% Pt, while anatase TiO2 films with a relatively low dielectric constant (similar to 40) were formed at Pt compositions > 63 at.%. The Ru-Pt (40-50 at.%) layer also attained an increase in work function of similar to 0.3-0.4 eV, leading to an improvement in the leakage currents of the TiO2/Ru-Pt capacitor. These findings suggested that a Ru-Pt layer could serve as a promising electrode for next-generation DRAM capacitors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ATOMIC-LAYER DEPOSITION | - |
dc.subject | HIGH DIELECTRIC-CONSTANT | - |
dc.subject | DOPED TIO2 FILMS | - |
dc.subject | THIN-FILMS | - |
dc.subject | TITANIUM-DIOXIDE | - |
dc.subject | GROWTH-BEHAVIOR | - |
dc.title | A Ru-Pt alloy electrode to suppress leakage currents of dynamic random-access memory capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Chong-Yun | - |
dc.identifier.doi | 10.1088/1361-6528/aaddbc | - |
dc.identifier.scopusid | 2-s2.0-85053379944 | - |
dc.identifier.wosid | 000444750800001 | - |
dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.29, no.45 | - |
dc.relation.isPartOf | NANOTECHNOLOGY | - |
dc.citation.title | NANOTECHNOLOGY | - |
dc.citation.volume | 29 | - |
dc.citation.number | 45 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC-LAYER DEPOSITION | - |
dc.subject.keywordPlus | HIGH DIELECTRIC-CONSTANT | - |
dc.subject.keywordPlus | DOPED TIO2 FILMS | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TITANIUM-DIOXIDE | - |
dc.subject.keywordPlus | GROWTH-BEHAVIOR | - |
dc.subject.keywordAuthor | DRAM | - |
dc.subject.keywordAuthor | capacitor | - |
dc.subject.keywordAuthor | Ru-Pt electrode | - |
dc.subject.keywordAuthor | rutile TiO2 | - |
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