Microstructural evolution and electrical resistivity of nanocrystalline W thin films grown by sputtering
- Authors
- Kim, Yong Jin; Kang, Sung-Gyu; Oh, Yeonju; Kim, Gyu Won; Cha, In Ho; Han, Heung Nam; Kim, Young Keun
- Issue Date
- 11월-2018
- Publisher
- ELSEVIER SCIENCE INC
- Keywords
- Tungsten (W); Thin film; Microstructure; Phase; TEM ASTAR; Electrical resistivity
- Citation
- MATERIALS CHARACTERIZATION, v.145, pp.473 - 478
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS CHARACTERIZATION
- Volume
- 145
- Start Page
- 473
- End Page
- 478
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/71981
- DOI
- 10.1016/j.matchar.2018.09.016
- ISSN
- 1044-5803
- Abstract
- Tungsten (W) thin films and nanostructures, particularly those having a beta (beta)-phase, have attracted a large amount of attention lately because an ultrathin beta-phase W film attached to a ferromagnetic layer can reverse the direction of magnetization upon current injection. However, in-depth microstructural studies including the phase transformation in W films as a function of thickness and post-deposition heat treatment temperature are rare. Here, we report the microstructural evolution and the change in the electrical resistivity of W films with thicknesses of 5-40 nm. Microstructural analyses indicate that the beta-W is nanocrystalline with a small grain size of about 5 nm, while the alpha (alpha)-W has a grain size larger than 130 nm with random crystal orientation. We present a state diagram showing the phase of the W film as functions of film thickness and annealing temperature.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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