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comparison of the resistivity of aluminum doped zinc oxide thin films with various buffer layers fabricated using different deposition conditions of ald

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-09-02T04:43:45Z-
dc.date.available2021-09-02T04:43:45Z-
dc.date.created2021-04-22-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/72277-
dc.titlecomparison of the resistivity of aluminum doped zinc oxide thin films with various buffer layers fabricated using different deposition conditions of ald-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationproceeding of THe 2nd international conference on display and solid state lighting-
dc.relation.isPartOfproceeding of THe 2nd international conference on display and solid state lighting-
dc.citation.titleproceeding of THe 2nd international conference on display and solid state lighting-
dc.citation.conferencePlaceseoul korea (coex)-
dc.citation.conferenceDate2008-01-30-
dc.type.rimsCONF-
dc.description.journalClass1-
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공과대학 (신소재공학부)
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