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Low-temperature sintering and microwave dielectric properties of B2O3-added ZnO-deficient Zn2GeO4 ceramics for advanced substrate application

Authors
Ma, Xing-HuaKweon, Sang-HyoIm, MirNahm, Sahn
Issue Date
11월-2018
Publisher
ELSEVIER SCI LTD
Keywords
B2O3 added 2n(2-x)GeO(4-x) ceramics; LTCC; Microwave dielectric properties; Advanced ceramic substrates
Citation
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.38, no.14, pp.4682 - 4688
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume
38
Number
14
Start Page
4682
End Page
4688
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/72396
DOI
10.1016/j.jeurceramsoc.2018.06.018
ISSN
0955-2219
Abstract
ZnO-deficient Zn2-xGeO4-x ceramics with 0.05 <= x <= 0.15 were synthesized because a ZnO secondary phase is formed in the stoichiometric Zn2GeO4 ceramics synthesized using micrometer-sized ZnO and GeO2 powders. The Zn1.3GeO3.9 ceramic sintered at 1000 degrees C showed a homogeneous Zn2GeO4 phase with good microwave dielectric properties: epsilon(r) of 6.8, Q x f of 49,000 GHz, and tau(f) of -16.7 ppm/degrees C. However, its sintering temperature was still too high for it to be used as an advanced substrate for low-temperature co-fired ceramic devices. Therefore, various amounts of B2O3 were added to the Zn1.9GeO3.9 ceramics to reduce their sintering temperature. Owing to the formation of a B2O3-GeO2 liquid phase, these ceramics were well sintered at low temperatures between 925 degrees C and 950 degrees C. In particular, 15 mol% B2O3-added Zn1.9GeO3.9 ceramic sintered at 950 degrees C showed promising microwave dielectric properties for advanced substrates without the reaction with an Ag electrode: epsilon(r) = 6.9, Q x f = 79,000 GHz, and tau(f) = 15 ppm/degrees C.
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