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Enhancing ambipolar carrier transport of black phosphorus field-effect transistors with Ni-P alloy contacts

Authors
Park, HyunikKim, Jihyun
Issue Date
21-9월-2018
Publisher
ROYAL SOC CHEMISTRY
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.20, no.35, pp.22439 - 22444
Indexed
SCIE
SCOPUS
Journal Title
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume
20
Number
35
Start Page
22439
End Page
22444
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/73073
DOI
10.1039/c8cp02285b
ISSN
1463-9076
Abstract
Reducing power consumption and leakage current in complementary metal-oxide semiconductors (CMOSs) has gained importance for further increasing the transistor density. An effective strategy to achieve this is to use ambipolar carrier transport that can exploit both holes and electrons in a single transistor. We report the enhancement of ambipolar behavior in black phosphorus (BP) field-effect transistors (FET) by forming a low-resistance Ni2P alloy contact via low-vacuum annealing at 250 degrees C, where the transformation of BP into Ni2P alloy selectively occurred at the source/drain electrodes with the BP channel remaining pristine. The N-channel current on/off ratio and field-effect electron carrier mobility of BP FETs were improved by 98% and 1290%, respectively. Our results suggest that high-performance ambipolar BP FETs with low-resistance ohmic contacts can be achieved via low-temperature vacuum annealing for next-generation CMOS applications.
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