Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
DC Field | Value | Language |
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dc.contributor.author | Kim, Janghyuk | - |
dc.contributor.author | Mastro, Michael A. | - |
dc.contributor.author | Tadjer, Marko J. | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-02T06:30:24Z | - |
dc.date.available | 2021-09-02T06:30:24Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-09-05 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/73137 | - |
dc.description.abstract | Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode beta-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake. Typical diode characteristics with a high rectifying ratio of similar to 10(5) were observed in a p-WSe2/n-Ga2O3 heterostructure diode, where WSe2 and beta-Ga2O3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent I-DS-V-DS output as well as I-DS-V-GS transfer characteristics with a high on/off ratio (similar to 10(8)) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of -5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET were maintained at elevated temperatures with outstanding air stability. Our WSe2-Ga2O3 heterostructure JFET paves the way to the low-dimensional high-power devices, enabling miniaturization of the integrated power electronic systems. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | MOS2 | - |
dc.subject | HETEROJUNCTION | - |
dc.subject | PERFORMANCE | - |
dc.subject | GROWTH | - |
dc.subject | DIODE | - |
dc.title | Heterostructure WSe2-Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1021/acsami.8b07030 | - |
dc.identifier.scopusid | 2-s2.0-85052474259 | - |
dc.identifier.wosid | 000444355700054 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.35, pp.29724 - 29729 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 35 | - |
dc.citation.startPage | 29724 | - |
dc.citation.endPage | 29729 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | HETEROJUNCTION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DIODE | - |
dc.subject.keywordAuthor | wide bandgap semiconductor | - |
dc.subject.keywordAuthor | heterostructure | - |
dc.subject.keywordAuthor | two-dimensional material | - |
dc.subject.keywordAuthor | field-effect transistor | - |
dc.subject.keywordAuthor | gallium oxide | - |
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