Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity
DC Field | Value | Language |
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dc.contributor.author | Kim, Kihyun | - |
dc.contributor.author | Hwang, Seokjin | - |
dc.contributor.author | Yu, Hwangseung | - |
dc.contributor.author | Choi, Yoonseok | - |
dc.contributor.author | Yoon, Yongsu | - |
dc.contributor.author | Bolotnikov, Aleksey E. | - |
dc.contributor.author | James, Ralph B. | - |
dc.date.accessioned | 2021-09-02T08:03:35Z | - |
dc.date.available | 2021-09-02T08:03:35Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-08 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/73886 | - |
dc.description.abstract | The presence of Te secondary-phase defects (i.e., Te inclusions and Te precipitates) is a major factor limiting the performance of CdZnTe (CZT) X-ray and gamma-ray radiation detectors. We find that Te secondary-phase defects in CZT crystals can be removed through postgrowth two-step annealing without creating new trapping centers (i.e., prismatic punching defects). Two-step annealing (with the first under a Cd pressure and the second one under a Te pressure) was demonstrated to he effective in removing the Te secondary-phase defects, while preserving the electrical resistivity of the CZT detector. The first step involves annealing of semi-insulating CZT under a Cd overpressure at 700 degrees C/600 degrees C (CZT/Cd) for 24 h, which completely eliminated the Te-rich secondary-phase defects (Te inclusions). However, it resulted in a lower resistivity of the samples (down to 2 x 10(4-6) Omega . cm). A subsequent annealing step involves processing CZT under a Te ambient condition at 540 degrees C/380 degrees C (CZT/Te) for 120 h, which restored the crystal's resistivity to 6.4 x 10(10 )Omega . cm without creating new Te secondary-phase defects. However, Te inclusions reappeared in the case of unnecessarily long Te ambient annealing. Pulse-height spectra taken with the two-step annealed CZT detectors showed an improved detector performance clue to a reduced concentration and the size of Te secondary-phase defects. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DETECTORS | - |
dc.title | Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kihyun | - |
dc.identifier.doi | 10.1109/TNS.2018.2856805 | - |
dc.identifier.scopusid | 2-s2.0-85050185620 | - |
dc.identifier.wosid | 000442364200013 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.8, pp.2333 - 2337 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 65 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 2333 | - |
dc.citation.endPage | 2337 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | DETECTORS | - |
dc.subject.keywordAuthor | CdZnTe (CZT) | - |
dc.subject.keywordAuthor | high resistivity | - |
dc.subject.keywordAuthor | pulse-height spectra | - |
dc.subject.keywordAuthor | real-time monitoring | - |
dc.subject.keywordAuthor | two-step annealing | - |
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