Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyeong Wook | - |
dc.contributor.author | Kim, Eok Su | - |
dc.contributor.author | Park, Joon Seok | - |
dc.contributor.author | Lim, Jun Hyung | - |
dc.contributor.author | Kim, Bo Sung | - |
dc.date.accessioned | 2021-09-02T09:01:19Z | - |
dc.date.available | 2021-09-02T09:01:19Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-07-09 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/74362 | - |
dc.description.abstract | Electrical characteristics of self-aligned coplanar amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) were investigated for different annealing temperatures. The field-effect mobility of the a-IGZO TFTs increased with the annealing temperature, in particular, for a small channel length. The effective channel length (L-eff) of the a-IGZO TFTs was extracted using the transmission line method. The decrease in L-eff significantly depended on the annealing temperature, due to the hydrogen diffusion into the a-IGZO channel region. The intrinsic mobility calculated from the channel resistance of the a-IGZO TFTs was in good agreement with the mobility corrected by L-eff. Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Influence of effective channel length in self-aligned coplanar amorphous-indium-gallium-zinc-oxide thin-film transistors with different annealing temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Bo Sung | - |
dc.identifier.doi | 10.1063/1.5027373 | - |
dc.identifier.scopusid | 2-s2.0-85049901997 | - |
dc.identifier.wosid | 000438744300013 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.113, no.2 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 113 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
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