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The Passivation Qualities of Hydrogenated Amorphous Silicon Nitride via Plasma Cleaning for Solar Cells

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dc.contributor.authorKIM, Donghwan-
dc.date.accessioned2021-09-02T09:26:47Z-
dc.date.available2021-09-02T09:26:47Z-
dc.date.created2021-04-22-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/74579-
dc.publisherThe 1st International Conference on Microelectronic and Plasma technology-
dc.titleThe Passivation Qualities of Hydrogenated Amorphous Silicon Nitride via Plasma Cleaning for Solar Cells-
dc.typeConference-
dc.contributor.affiliatedAuthorKIM, Donghwan-
dc.identifier.bibliographicCitationThe 1st International Conference on Microelectronic and Plasma technology-
dc.relation.isPartOfThe 1st International Conference on Microelectronic and Plasma technology-
dc.citation.titleThe 1st International Conference on Microelectronic and Plasma technology-
dc.citation.conferencePlaceKO-
dc.citation.conferenceDate2008-08-18-
dc.type.rimsCONF-
dc.description.journalClass1-
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공과대학 (신소재공학부)
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