Performance of WCN diffusion barrier for Cu multilevel interconnects
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung Yeon | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Kim, Yong Tae | - |
dc.date.accessioned | 2021-09-02T13:31:18Z | - |
dc.date.available | 2021-09-02T13:31:18Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76621 | - |
dc.description.abstract | The electrical and thermal properties of a WCN diffusion barrier have been studied for Cu multilevel interconnects. The WCN has been prepared using an atomic layer deposition system with WF6-CH4-NH3-H-2 gases and has a very low resistivity of 100 mu Omega cm and 96.9% step coverage on the high-aspect-ratio vias. The thermally stable WCN maintains an amorphous state at 800 degrees C and Cu/WCN contact resistance remains within a 10% deviation from the initial value after 700 degrees C. The mean time to failure suggests that the Cu/WCN interconnects have a longer lifetime than Cu/TaN and Cu/WN interconnects because WCN prevents Cu migration owing to the stress evolution from tensile to compressive. (C) 2018 The Japan Society of Applied Physics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | ATOMIC LAYER DEPOSITION | - |
dc.subject | THROUGH-SILICON | - |
dc.subject | PULSE PLASMA | - |
dc.subject | THIN-FILMS | - |
dc.subject | ELECTROMIGRATION | - |
dc.subject | TSV | - |
dc.subject | TAN | - |
dc.subject | RELIABILITY | - |
dc.subject | DEPENDENCE | - |
dc.subject | STRESS | - |
dc.title | Performance of WCN diffusion barrier for Cu multilevel interconnects | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.identifier.doi | 10.7567/JJAP.57.04FC01 | - |
dc.identifier.wosid | 000430981800019 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.57, no.4 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 57 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | THROUGH-SILICON | - |
dc.subject.keywordPlus | PULSE PLASMA | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ELECTROMIGRATION | - |
dc.subject.keywordPlus | TSV | - |
dc.subject.keywordPlus | TAN | - |
dc.subject.keywordPlus | RELIABILITY | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | STRESS | - |
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