Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Control of the Preferred Orientation of Polycrystalline Mo and Cu(InGa)Se-2 Thin Films by Inserting Graphene Layers

Authors
Ryu, HeesanPark, Do HyunJung, YounghunKim, JihyunKim, Woo Kyoung
Issue Date
4월-2018
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
Cu(InGa)Se-2; Graphene; Selenization; Texture
Citation
SCIENCE OF ADVANCED MATERIALS, v.10, no.4, pp.570 - 574
Indexed
SCIE
Journal Title
SCIENCE OF ADVANCED MATERIALS
Volume
10
Number
4
Start Page
570
End Page
574
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/76625
DOI
10.1166/sam.2018.3079
ISSN
1947-2935
Abstract
To demonstrate the effect of graphene (Gr) layer on subsequently deposited Mo and Cu(InGa)Se-2 (CIGS) crystal orientation, graphene sheets grown on Cu foil by chemical vapor deposition were transferred to low-alkali glass substrates by a simple wet-based graphene transfer process. Mo was sputter-deposited on glass and glass/Gr substrates, and CIGS was formed by selenization of the co-sputtered CuGaIn precursors. The Mo thin films on the graphene coated glass substrates (glass/Gr) had a more preferred (110) orientation than the bare glass substrate, showing a lower sheet resistance. Subsequently, glass/Gr/Mo/CIGS revealed the (220) preferred CIGS orientation, which is potentially beneficial to the CIGS cell efficiency but difficult to obtain by selenization of the metal precursors.
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE