High breakdown voltage quasi-two-dimensional beta-Ga2O3 field-effect transistors with a boron nitride field plate
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Jinho | - |
dc.contributor.author | Kim, Hyoung Woo | - |
dc.contributor.author | Kang, In Ho | - |
dc.contributor.author | Yang, Gwangseok | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-02T13:44:19Z | - |
dc.date.available | 2021-09-02T13:44:19Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-03-19 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76708 | - |
dc.description.abstract | We have demonstrated a beta-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional beta-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the beta-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional beta-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated beta-Ga2O3 MESFETs, along with a high on/off current ratio (> 10(6)) and excellent current saturation. A three-terminal off-state breakdown voltage of 344V was obtained, with a threshold voltage of -7.3V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional beta-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated beta-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of beta-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage. Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | POWER | - |
dc.subject | DIODES | - |
dc.subject | HEMT | - |
dc.title | High breakdown voltage quasi-two-dimensional beta-Ga2O3 field-effect transistors with a boron nitride field plate | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1063/1.5018238 | - |
dc.identifier.scopusid | 2-s2.0-85044272941 | - |
dc.identifier.wosid | 000428458100009 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.112, no.12 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 112 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | DIODES | - |
dc.subject.keywordPlus | HEMT | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.