High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer
DC Field | Value | Language |
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dc.contributor.author | Oh, Jeong-Tak | - |
dc.contributor.author | Moon, Yong-Tae | - |
dc.contributor.author | Kang, Dae-Sung | - |
dc.contributor.author | Park, Chan-Keun | - |
dc.contributor.author | Han, Jae-Woong | - |
dc.contributor.author | Jung, Myung-Hoon | - |
dc.contributor.author | Sung, Youn-Joon | - |
dc.contributor.author | Jeong, Hwan-Hee | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-02T13:52:01Z | - |
dc.date.available | 2021-09-02T13:52:01Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-03-05 | - |
dc.identifier.issn | 1094-4087 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76760 | - |
dc.description.abstract | We demonstrated the growth of crack-free high-quality GaN-based UV vertical LEDs (VLEDs) (lambda = 365 nm) on 6-inch sapphire substrates by using an ex-situ sputtered AlN nucleation layer (NL) and compared their performance with that of UV VLEDs with an in situ low temperature (LT) AlGaN NL. The X- ray diffraction (XRD) results showed that the ex-situ AlN sample contained lower densities of screw-type and edge-type threading dislocations than the in situ AlGaN NL sample. The micro-Raman results revealed that the ex-situ AlN sample was under more compressive stress than the in situ AlGaN sample. As the current was increased, the electroluminescence peaks of both of the samples blue-shifted, reached a minimum wavelength at 1000 mA, and then slightly red-shifted. Packaged VLEDs with the ex-situ AlN NL yielded 6.5% higher light output power at 500 mA than that with the in situ AlGaN NL. The maximum EQEs of the VLED with the in situ AlGaN and ex-situ AlN NLs were 43.7% and 48.2%, respectively. Based on the XRD and Raman results, the improved light output power of the ex-situ AlN sample is attributed to the lower density of TDs. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | OPTICAL SOC AMER | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | BUFFER LAYERS | - |
dc.subject | OUTPUT POWER | - |
dc.subject | DISLOCATIONS | - |
dc.subject | GROWTH | - |
dc.subject | INGAN | - |
dc.title | High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.scopusid | 2-s2.0-85042861577 | - |
dc.identifier.wosid | 000427147200002 | - |
dc.identifier.bibliographicCitation | OPTICS EXPRESS, v.26, no.5, pp.5111 - 5117 | - |
dc.relation.isPartOf | OPTICS EXPRESS | - |
dc.citation.title | OPTICS EXPRESS | - |
dc.citation.volume | 26 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 5111 | - |
dc.citation.endPage | 5117 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | BUFFER LAYERS | - |
dc.subject.keywordPlus | OUTPUT POWER | - |
dc.subject.keywordPlus | DISLOCATIONS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | INGAN | - |
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