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Synthetic antiferromagnetic spintronics

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dc.contributor.authorDuine, R. A.-
dc.contributor.authorLee, Kyung-Jin-
dc.contributor.authorParkin, Stuart S. P.-
dc.contributor.authorStiles, M. D.-
dc.date.accessioned2021-09-02T14:03:46Z-
dc.date.available2021-09-02T14:03:46Z-
dc.date.created2021-06-16-
dc.date.issued2018-03-
dc.identifier.issn1745-2473-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/76850-
dc.description.abstractSpintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. We discuss the opportunities that arise from synthetic antiferromagnets consisting of two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and have antiparallel magnetizations.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherNATURE PUBLISHING GROUP-
dc.subjectEXCHANGE-
dc.subjectMAGNETORESISTANCE-
dc.subjectOSCILLATIONS-
dc.subjectVOLTAGE-
dc.subjectTORQUE-
dc.subjectORDER-
dc.titleSynthetic antiferromagnetic spintronics-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Kyung-Jin-
dc.identifier.doi10.1038/s41567-018-0050-y-
dc.identifier.scopusid2-s2.0-85042721631-
dc.identifier.wosid000426546300010-
dc.identifier.bibliographicCitationNATURE PHYSICS, v.14, no.3, pp.217 - 219-
dc.relation.isPartOfNATURE PHYSICS-
dc.citation.titleNATURE PHYSICS-
dc.citation.volume14-
dc.citation.number3-
dc.citation.startPage217-
dc.citation.endPage219-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.subject.keywordPlusEXCHANGE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusOSCILLATIONS-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordPlusTORQUE-
dc.subject.keywordPlusORDER-
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