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Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yi, Boram | - |
| dc.contributor.author | Lee, Boung Jun | - |
| dc.contributor.author | Oh, Jin-Hwan | - |
| dc.contributor.author | Kim, Ji-Seon | - |
| dc.contributor.author | Kim, Jun-Hyeok | - |
| dc.contributor.author | Yang, Ji-Woon | - |
| dc.date.accessioned | 2021-09-02T14:06:08Z | - |
| dc.date.available | 2021-09-02T14:06:08Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2018-03 | - |
| dc.identifier.issn | 0018-9499 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/76868 | - |
| dc.description.abstract | A physics-based compact model of the parasitic bipolar current induced by an energetic particle is presented for single-event transients in FinFETs. The terminal charges are modeled to predict the body voltage of the FinFET in the transient correctly. The models are implemented using Verilog-A and are verified through 3-D technology computer-aided design (TCAD) simulations. The results of the modeling show good agreement with the TCAD data, for both structural variations and energy variations of the energetic particles. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | SIMULATION | - |
| dc.subject | MOSFETS | - |
| dc.subject | DEVICES | - |
| dc.subject | PLANAR | - |
| dc.subject | LOGIC | - |
| dc.title | Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Yang, Ji-Woon | - |
| dc.identifier.doi | 10.1109/TNS.2018.2796622 | - |
| dc.identifier.scopusid | 2-s2.0-85041009732 | - |
| dc.identifier.wosid | 000427694800003 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.3, pp.866 - 870 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
| dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
| dc.citation.volume | 65 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 866 | - |
| dc.citation.endPage | 870 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Nuclear Science & Technology | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
| dc.subject.keywordPlus | SIMULATION | - |
| dc.subject.keywordPlus | MOSFETS | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordPlus | PLANAR | - |
| dc.subject.keywordPlus | LOGIC | - |
| dc.subject.keywordAuthor | Compact model | - |
| dc.subject.keywordAuthor | FinFET | - |
| dc.subject.keywordAuthor | parasitic bipolar junction transistor (BJT) current | - |
| dc.subject.keywordAuthor | single-event transient (SET) | - |
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