High Responsivity beta-Ga2O3 Metal-Semiconductor-Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes
- Authors
- Oh, Sooyeoun; Kim, Chang-Koo; Kim, Jihyun
- Issue Date
- 3월-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- gallium oxide; solar-blind; photodetectors; graphene
- Citation
- ACS PHOTONICS, v.5, no.3, pp.1123 - 1128
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS PHOTONICS
- Volume
- 5
- Number
- 3
- Start Page
- 1123
- End Page
- 1128
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/77194
- DOI
- 10.1021/acsphotonics.7b01486
- ISSN
- 2330-4022
- Abstract
- We demonstrated high responsivity metal-semiconductor -metal (MSM) solar-blind photodetectors by integrating exfoliated beta-Ga2O3 microlayers with graphene, which is a deep ultraviolet (UV) transparent and conductive electrode. Photodetectors with MSM structures commonly suffer from low responsivity, although they feature a facile fabrication process, low dark current, and fast response speed. The beta-Ga2O3 MSM solar-blind photodetectors with graphene electrodes exhibited excellent operating characteristics including higher responsivity (similar to 29.8 A/W), photo-to-dark current ratio (similar to 1 x 10(6)%), rejection ratio (R-234nm/R-365nm, similar to 9.4 x 10(3)), detectivity (similar to 1 x 10(12) Jones), and operating speed to UV-C wavelengths, compared with MSM photodetectors with conventional metal electrodes. Absence of shading by the integration of graphene with beta-Ga2O3 allows maximum exposure to the incident photons, suggesting a great potential for deep UV optoelectronic applications.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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