Impurities Behaviors in Indium Iodide Materials
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Leem, Sohee | - |
dc.contributor.author | Hwang, Seokjin | - |
dc.contributor.author | Yu, Hwanseung | - |
dc.contributor.author | Yoon, Yongsu | - |
dc.contributor.author | Kim, Kihyun | - |
dc.date.accessioned | 2021-09-02T14:47:48Z | - |
dc.date.available | 2021-09-02T14:47:48Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 0018-9499 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77274 | - |
dc.description.abstract | Environmentally friendly 99.998%-pure indium iodide (InI), one candidate materials for the room-temperature operating radiation detector, was purified more than 250 times using the zone-refining method to reduce the impurities. Segregation coefficient of major positive and negative impurities of the purified InI ingot was analyzed using time-of-flight secondary ion mass spectroscopy. Electrical and spectroscopic properties of the purified Pd/InI/Pd detector were also determined. Planar Pd/InI/Pd detector showed the 59.5-keV gamma peak of Am-241 clearly. However, low-energy gamma peaks were buried in the noise. Mechanical or electrical degradation under an ambient condition was not observed for six months. Electrical resistivity and electron mobility-lifetime product of the multiple-refined InI were 4 x 10(11) Omega.cm and 1.3 x 10(-3) cm(2)/V, respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MERCURIC IODIDE | - |
dc.subject | RAY | - |
dc.subject | FABRICATION | - |
dc.subject | CRYSTALS | - |
dc.subject | GROWTH | - |
dc.title | Impurities Behaviors in Indium Iodide Materials | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Kihyun | - |
dc.identifier.doi | 10.1109/TNS.2018.2796388 | - |
dc.identifier.scopusid | 2-s2.0-85040905007 | - |
dc.identifier.wosid | 000427694800009 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.65, no.3, pp.909 - 912 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.title | IEEE TRANSACTIONS ON NUCLEAR SCIENCE | - |
dc.citation.volume | 65 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 909 | - |
dc.citation.endPage | 912 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | MERCURIC IODIDE | - |
dc.subject.keywordPlus | RAY | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | Indium iodide (InI) | - |
dc.subject.keywordAuthor | Pd/InI/Pd | - |
dc.subject.keywordAuthor | pulse-height measurements | - |
dc.subject.keywordAuthor | radiation detectors | - |
dc.subject.keywordAuthor | segregation coefficients | - |
dc.subject.keywordAuthor | time-of-flight secondary ion mass spectroscopy (ToF-SIMS) | - |
dc.subject.keywordAuthor | zone refining | - |
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