Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films
DC Field | Value | Language |
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dc.contributor.author | Kim, Taeho | - |
dc.contributor.author | Park, Jinsung | - |
dc.contributor.author | Cheong, Byoung-Ho | - |
dc.contributor.author | Jeon, Sanghun | - |
dc.date.accessioned | 2021-09-02T14:52:03Z | - |
dc.date.available | 2021-09-02T14:52:03Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-02-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/77310 | - |
dc.description.abstract | The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 degrees C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric force microscopy. Hf0.5Zr0.5O2 films annealed at 450 degrees C/50 atm have excellent characteristics, including remanent polarizations greater than 20 mu C/cm(2), a switching speed of 200 ns, and reliability, measured by sustained performance after 10(10) bipolar switching cycles. The enhanced device features are attributed to the transition to the orthorhombic-phase from the tetragonal-phase of Hf0.5Zr0.5O2 at high pressure, which is also consistent with the results of "wake-up" analysis, and the variations of the pure polarization curves, extracted from the total displacement field under pressure. Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | FIELD | - |
dc.title | Effects of high pressure nitrogen annealing on ferroelectric Hf0.5Zr0.5O2 films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jinsung | - |
dc.contributor.affiliatedAuthor | Cheong, Byoung-Ho | - |
dc.identifier.doi | 10.1063/1.5003369 | - |
dc.identifier.scopusid | 2-s2.0-85042848800 | - |
dc.identifier.wosid | 000427022500032 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.112, no.9 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 112 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | FIELD | - |
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